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SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician

SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
SAMSUNG 990 EVO, 1TB M.2 2280, PCIe 4.0 NVMe, Read Speed Up to 5000 MB/s, 3D TLC V-NAND, support Samsung Magician
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ر.س 599
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Ex Tax: ر.س 451
  • Stock: In Stock
  • Model: MZ-V9E1T0BW
Views: 3960
The Samsung 990 EVO (Model: MZ-V9E1T0BW) is a versatile and efficient storage unit designed to deliver reliable high-speed performance using the PCIe 4.0 NVMe interface. Positioned between mainstream and high-performance solutions, the 990 EVO is ideal for everyday computing, gaming, productivity, and content creation. It combines strong sequential speeds, excellent power efficiency, and Samsung’s proven reliability in a compact M.2 2280 form factor, making it a smart upgrade for modern PCs and laptops.


Key Features:


• Capacity: 1TB
• Interface: PCIe 4.0 – NVMe
• Form Factor: M.2 2280
• Sequential Read Speed: Up to 5,000 MB/s
• Sequential Write Speed: Up to 4,200 MB/s
• Optimized power efficiency for cooler and quieter operation
• Reliable performance for gaming and daily workloads
• Samsung Magician software support


Full Technical Specifications:


Design & Interface
Model Number: MZ-V9E1T0BW
Storage Type: NVMe
Form Factor: M.2 2280
Interface: PCIe 4.0

Performance
Sequential Read: Up to 5,000 MB/s
Sequential Write: Up to 4,200 MB/s
Random Performance (IOPS): Optimized for smooth multitasking and everyday applications

Controller & Memory
Controller: Samsung proprietary controller
Memory Type: Samsung 3D TLC V-NAND

Capacity & Endurance
Total Capacity: 1TB
Endurance Rating (TBW): High durability suitable for long-term consumer use

Power & Thermal
Power Consumption: Optimized for improved energy efficiency
Thermal Management: Advanced thermal control via Samsung firmware technologies

Additional Features
SMART monitoring support
AES 256-bit encryption support
Compatible with Windows and Linux systems
Samsung Magician software for drive management and firmware updates

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